The BDX88C is a Silicon PNP Darlington Power Transistor.
| Max Operating Temp | 200 °C |
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Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C ·Complement to Type BDX87.
ance,Junction to Case MAX UNIT 1.45 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX88/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX88 -45 VCEO(S.
STMicroelectronics
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SavantIC
·With TO-3 package ·Complement to type BDX87C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline .
ecified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain DC current gain Collector cut-off current Collector cut-off current Emitter cut-off.
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| Part Number | Manufacturer | Description |
|---|---|---|
| BDX88 | Inchange Semiconductor | Silicon PNP Darlington Power Transistor |
| BDX88A | Inchange Semiconductor | Silicon PNP Darlington Power Transistor |
| BDX88B | Seme LAB | Bipolar PNP Device |
| BDX88B | Inchange Semiconductor | Silicon PNP Darlington Power Transistor |
| BDX88 | STMicroelectronics | Power Darlingtons |
| BDX88B | STMicroelectronics | Power Darlingtons |
| BDX88 | Seme LAB | Bipolar PNP Device |