BDY20 Datasheet and Specifications PDF

The BDY20 is a Silicon NPN Power Transistor.

Part NumberBDY20 Datasheet
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance an. ARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICEO Collector Cutoff Current .
Part NumberBDY20 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.. out notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semel.

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.