| Part Number | BDY24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device. YMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A ICES Collector Cutoff . |
BDY24 Datasheet
The BDY24 is a Silicon NPN Power Transistor.
| Part Number | BDY24 |
|---|---|
| Description | (BDY23 - BDY25)NPN SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductor |
| Overview | BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB . DY25, 182T2 Value 2 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDY23, 180T2 Min Typ Mx Unit 60 90 140 60 100 200 - 1.0 mA V V VCEO(BR) IC=50 mA, IB=0 BDY24, 181T2 BDY25, 182T2 V(BR)CBO Coll. |