BF2040 Datasheet
BF2040 Datasheet (Infineon)
Infineon
Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF2040... ES.
1 2007-06-01
BF2040
*
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-sou.
BF2040 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
BF 2040 Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive.
V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current nA VG1S = 5 V, V G2S = 0 V Gate 2.