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BF994S Datasheet

The BF994S is a N-Channel Dual Gate MOS-Fieldeffect Tetrode. Download the datasheet PDF and view key features and specifications below.

Part NumberBF994S
ManufacturerVishay
Overview BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially. D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF994 Marking: MG Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximu.
Part NumberBF994S
DescriptionN-channel dual-gate MOS-FET
ManufacturerNXP Semiconductors
Overview Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and.
* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS
* VHF applications such as:
  – VHF television tuners
  – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking .
Part NumberBF994S
DescriptionSilicon N Channel MOSFET Tetrode
ManufacturerSiemens Semiconductor Group
Overview Silicon N Channel MOSFET Tetrode q BF 994 S For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type BF 994 S Marking MG Ordering Code (tape . rce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± .