| Part Number | BFG193 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 4 F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharg. otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100. |
BFG193 Datasheet and Specifications PDF
The BFG193 is a NPN Silicon RF Transistor.
Key Specifications
| Package | SOT-223-4 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | BFG193 Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, ob. acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V,. |
| Part Number | BFG193 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance a. TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 100 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC= 30mA ; VCE= 8V 50 20. |