BFN17 Datasheet and Specifications PDF

The BFN17 is a PNP Silicon High-Voltage Transistors.

Key Specifications

Part NumberBFN17 Datasheet
ManufacturerInfineon
Overview BFN17, BFN19 PNP Silicon High-Voltage Transistors  Suitable for video output stages in TV sets and 1 2 3 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage. ol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = .
Part NumberBFN17 Datasheet
DescriptionPNP Silicon High-Voltage Transistors
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon High-Voltage Transistors BFN 17 BFN 19 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Comp. emiconductor Group 1 5.91 BFN 17 BFN 19 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 17 BFN 19 Collector-base breakdown voltage IC = 100 µA BFN 17 BFN 19 Emitter-base breakdown vol.
Part NumberBFN17 Datasheet
DescriptionSOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ManufacturerZetex Semiconductors
Overview SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN17 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN16 DG E C B SYMBOL VCBO V CEO V EBO I CM IC IB P . I C=-30mA, V CE=-10V* I C=-20mA, V CE=-10V* f=20MHz V CB=-30V,f=1MHz Collector Cut-Off Current I CBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance I EBO V CE(sat) V BE(sat) .

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