BFN22 Datasheet and Specifications PDF

The BFN22 is a Surface mount Si-Epitaxial PlanarTransistors.

Key Specifications

Mount TypeHolder
Length254 mm
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Part NumberBFN22 Datasheet
ManufacturerDiotec Semiconductor
Overview BFN 22 NPN High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoff. Min. Collector-Base cutoff current
* Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 200 V, Tj = 150/C Emitter-Base cutoff current
* Emitterreststrom IC = 0, VEB = 5 V IC = 10 mA, IB = 1 mA IEB0 VCEsat
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* ICB0 ICB0
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* Kennwerte (Tj = 25/C) Typ.
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* Max. 100 nA 20 :A 100 nA 500 mV Colle.
Part NumberBFN22 Datasheet
DescriptionNPN Silicon High-Voltage Transistor
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon High-Voltage Transistor q q q q q BFN 22 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capa. Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ Emitter-base breakdown voltage IE = 10.

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