The BFN23 is a PNP Silicon High-Voltage Transistor.
| Part Number | BFN23 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFN 23 PNP Silicon High-Voltage Transistor q q q q q BFN 23 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage . BFN 23 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ Emitter-base breakdown voltage. |
| Part Number | BFN23 Datasheet |
|---|---|
| Description | Surface mount Si-Epitaxial PlanarTransistors |
| Manufacturer | Diotec Semiconductor |
| Overview |
BFN 23 PNP
High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoff.
(Tj = 25/C) Min. Collector-Base cutoff current * Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 200 V, Tj = 150/C - VCB = 250 V, RBE = 2.7 kS - VCB = 250 V, RBE = 2.7 kS, Tj = 150/C Emitter-Base cutoff current * Emitterreststrom IC = 0, - VEB = 5 V - IEB0 * - ICB0 - ICB0 - ICBR - ICBR * *. |
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