BFN26 Datasheet and Specifications PDF

The BFN26 is a NPN Silicon High-Voltage Transistors.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Frequency70 MHz
Height900 µm
Length2.9 mm
Width1.3 mm
Max Operating Temp150 °C
Part NumberBFN26 Datasheet
ManufacturerInfineon
Overview BFN24, BFN26 NPN Silicon High-Voltage Transistors  Suitable for video output stages in TV sets and 3 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  C. ymbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE.
Part NumberBFN26 Datasheet
DescriptionNPN Silicon High-Voltage Transistors
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Comp. Cu. Semiconductor Group 1 07.94 BFN 24 BFN 26 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 24 BFN 26 Collector-base breakdown voltage IC = 100 µA BFN 24 BFN 26 Emitter-base break.

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