BFN39 Datasheet and Specifications PDF

The BFN39 is a PNP Silicon High-Voltage Transistors.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBFN39 Datasheet
ManufacturerInfineon
Overview BFN37, BFN39 PNP Silicon High-Voltage Transistors  Suitabled for video output stages in TV sets and 4 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  . ified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff curre.
Part NumberBFN39 Datasheet
DescriptionPNP Silicon High-Voltage Transistors
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Comp. pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 37 BFN 39 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN 37 BFN 39 Collector-base breakdown voltage IC = .
Part NumberBFN39 Datasheet
DescriptionSOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ManufacturerZetex Semiconductors
Overview SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – JANUARY 1996 7 FEATURES: * High VCEO=300V and low VCE(sat) APPLICATIONS: * Suitable for video output stages in TV sets . * High VCEO=300V and low VCE(sat) APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:PARTMARKING DETAIL:BFN38 BFN39 BFN39 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Conti.

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