BFP194 Datasheet and Specifications PDF

The BFP194 is a PNP Silicon RF Transistor.

Key Specifications

Max Operating Temp150 °C
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Part NumberBFP194 Datasheet
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA BFP 194 ESD: Electrostatic dischar. . typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 15 - - Collector-base cutoff current ICBO nA VCB = 10 V, IE = 0 - - 100 Emitter-base cutoff current IEBO µA VEB = 2 V, IC = 0 - - 1 DC current gain hFE - IC = 70 mA, VCE = 8 V .
Part NumberBFP194 Datasheet
DescriptionPNP Silicon RF Transistor
ManufacturerInfineon
Overview PNP Silicon RF Transistor  For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA BFP 194 3 4 2 1 VPS05178 ESD: Ele. l Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V V(BR)CEO 15 - -V ICBO - - 100 nA IEBO - - 1 µA h.

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