| Part Number | BFR540 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for RF frontend in w.
A
hFE
DC Current Gain
IC= 40mA ; VCE= 8V
100
250
fT
Current-Gain *Bandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz 9 GHz COB Output Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.9 pF Cre Feedback Frequency IE= 0 ; VCB= 8V; f= 1MHz 0.6 pF PG Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 14 dB. |
BFR540 Datasheet
The BFR540 is a NPN Transistor.
| Part Number | BFR540 |
|---|---|
| Description | NPN 9GHz wideband transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits
High power gain Low noise figure High transition frequency Gold metallization en.
and benefits
* High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. 1.3 Applications * RF front end wideband applications in the GHz range * Analog and digital cellular telephones * Cordless telephones (CT1, CT2, DECT, etc.) * Radar dete. |