BFY180 Datasheet and Specifications PDF

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT =.

* HiRel Discrete and Microwave Semiconductor
* For low power amplifiers at collector currents from 0.2 to 2.5 mA
* Hermetically sealed microwave package
* fT = 6.5 GHz, F = 2.6 dB at 2 GHz
* qualified
* ESA/SCC Detail Spec. No.: 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive dev.

BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package .

176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 8 15 15 2 4 0.5 30 200 -65
*+200 -65
*+200 1) Unit V V V V mA mA mW °C °C °C K/W < 805 Notes.: 1) Th.