BFY182 Datasheet
BFY182 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed mic.
* HiRel Discrete and Microwave Semiconductor
* For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA
* Hermetically sealed microwave package
* fT = 8 GHz, F = 2.4 dB at 2 GHz
* qualified
* ESA/SCC Detail Spec. No.: 5611/006
BFY 182
Micro-X1
ESD: Electrostatic disc.
BFY182 Datasheet (Infineon)
Infineon
BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed .
ssipation, 2), 3.) TS ≤ 136°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point
3.)
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS
Values 12 20 20 2 35 4
1)
Unit V V V V mA mA mW °C °C °C K/W
250 200 -65
*+200 -65
*.