Part Number	BLF884PS Datasheet
Manufacturer	NXP Semiconductors
Overview	A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applicat. and benefits * Excellent ruggedness * Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W * High power gain * High efficiency * Designed for broadband operation (470 MHz to 860 MHz) * Internal input matching for high gain and optimum broadband operation * Excellent reliability * Easy power.