| Part Number | BLL6H1214-500 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150.
and benefits
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 % * Easy power control * Integrated ESD protection * High flexibility with respe. |
BLL6H1214-500 Datasheet
The BLL6H1214-500 is a LDMOS L-band radar power transistor.
| Part Number | BLL6H1214-500 |
|---|---|
| Description | LDMOS L-band radar power transistor |
| Manufacturer | Ampleon |
| Overview |
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 15.
and benefits
* Easy power control * Integrated ESD protection * High flexibility with respect to pulse formats * Excellent ruggedness * High efficiency * Excellent thermal stability * Designed for broadband operation (1.2 GHz to 1.4 GHz) * Internally matched for ease of use * Compliant to Directive . |