The BLV7N60 is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | BLV7N60 Datasheet |
|---|---|
| Manufacturer | BELLING |
| Overview | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n. .belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV7N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss C. |
| Part Number | BLV7N60 Datasheet |
|---|---|
| Description | N-channel Enhancement Mode Power MOSFET |
| Manufacturer | Estek |
| Overview | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n. x. Max. Value 1.0 62.5 Units ℃/ W ℃/ W Page 1/6 BLV7N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Te. |