BRF6N60 Datasheet
BRF6N60 Datasheet (LZG)
LZG
BRF6N60(CS6N60F) : DC/DC N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : DS 、、、、 dv/dt 。 Features:.
Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteris.
BRF6N60 Datasheet (VBsemi)
VBsemi
BRF6N60-VB BRF6N60-VB Datasheet /$IBOOFM7 %4 Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V.
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
APPLICATIONS
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC.