The BS270 is a N-Channel Enhancement Mode Field Effect Transistor.
| Package | TO-92 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 4.7 mm |
| Length | 4.7 mm |
| Width | 3.93 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | BS270 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista. 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol. |
| Part Number | BS270 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | onsemi |
| Overview |
These N-Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance.
* 400 mA, 60 V. RDS(ON) = 2 W @ VGS = 10 V * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability * These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Symbol Parameter Valu. |
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