BS270 Datasheet and Specifications PDF

The BS270 is a N-Channel Enhancement Mode Field Effect Transistor.

Key Specifications

PackageTO-92
Mount TypeThrough Hole
Pins3
Height4.7 mm
Length4.7 mm
Width3.93 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBS270 Datasheet
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista. 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol.
Part NumberBS270 Datasheet
DescriptionN-Channel Enhancement Mode Field Effect Transistor
Manufactureronsemi
Overview These N-Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance.
* 400 mA, 60 V. RDS(ON) = 2 W @ VGS = 10 V
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Symbol Parameter Valu.

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