| Part Number | BSH114 Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23. 2. Features s s s s TrenchMOS™ technology Low on-state resi. s s s s TrenchMOS™ technology Low on-state resistance Very fast switching Surface mount package. 3. Applications s Relay driver s DC to DC converter s General purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simpli. |
BSH114 Datasheet and Specifications PDF
The BSH114 is a N-channel enhancement mode field effect transistor.
| Part Number | BSH114 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
BSH114 BSH114 N-Channel 100 V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.240 at VGS = 10 V
2.0
100
0.250 at VGS = 6 V
1.8
0.260 at VGS = 4.5 V
1.7
Qg (Typ.) 2.9 nC
.
* TrenchFET® Power MOSFET * 100 % Rg Tested * 100 % UIS Tested * Material categorization: APPLICATIONS * DC/DC Converters * Load Switch * LED Backlighting in LCD TVs ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou. |