BSR57 Datasheet and Specifications PDF

The BSR57 is a N-Channel JFET Low-Frequency Low-Noise Amplifier.

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Part NumberBSR57 Datasheet
Manufactureronsemi
Overview N-Channel JFET Low-Frequency Low-Noise Amplifier BSR57 • This device is designed for low−power chopper or switching application sourced from process 51 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless oth. availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or inc.
Part NumberBSR57 Datasheet
DescriptionN-Channel Low-Frequency Low-Noise Amplifier
ManufacturerFairchild Semiconductor
Overview BSR57 BSR57 N-Channel Low-Frequency Low-Noise Amplifier • This device is designed for low-power chopper or switching application sourced from process 51 2 1 Mark: M5 3 SOT-23 1. Drain 2. Source 3.. = 0V, ID = 0 VDS = 0V, VGS = 10V VDD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 6.0V 20 2.0 Min. 40 Max. 1.0 100 6.0 0.5 40 5.0 6.0 4.0 50 Units V nA mA V V Ω pF ns ns ns ©2003 Fairchild Semiconductor Corporation Rev. A, February 2003 BSR57 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0..
Part NumberBSR57 Datasheet
DescriptionN-channel FETs
ManufacturerNXP Semiconductors
Overview Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are. and benefits
* Interchangeable drain and source connections
* Small package 1.3 Applications
* Low-power, chopper or switching applications
* Thick and thin-film circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage IDSS drain l.