| Part Number | BSS123LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS123LT1/D
TMOS FET Transistor
N–Channel
3 DRAIN 1 GATE 2 SOURCE
BSS123LT1
Motorola Preferred Device
®
MAXIMUM RATINGS
Rating Drain–S.
y Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS * * IGSS * * * * 15 60 50 nAdc 100 * * Vdc µAdc ON CHARACTERISTICS(4) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain *Source On *Resistance (VGS = 10 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) 1. 2. |
BSS123LT1 Datasheet and Specifications PDF
The BSS123LT1 is a TMOS FET Transistor.
| Part Number | BSS123LT1 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | onsemi |
| Overview |
BSS123LT1
Preferred Device
Power MOSFET 170 mAmps, 100 Volts
N−Channel SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDSS 100 Vd.
* Pb *Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain *Source Voltage VDSS 100 Vdc Gate *Source Voltage * Continuous * Non *repetitive (tp ≤ 50 ms) VGS ± 20 Vdc VGSM ± 40 Vpk Drain Current * Continuous (Note 1) * Pulsed (Note 2) Adc ID 0.17 IDM 0.68 Maximum ratings . |