| Part Number | BSS135 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIPMOS® Small-Signal Transistor
BSS 135
q q q q q q q
VDS 600 V ID 0.080 A RDS(on) 60 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
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Type
Ordering Code
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specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = * 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = * 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-res. |