| Part Number | BSS149 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIPMOS® Small-Signal Transistor
BSS 149
q q q q q q q
VDS 200 V ID 0.35 A RDS(on) 3.5 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
1
2
3
Type
Ordering Code
.
fied. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = * 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = * 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistan. |
BSS149 Datasheet and Specifications PDF
The BSS149 is a SIPMOS Small-Signal Transistor.
| Part Number | BSS149 Datasheet |
|---|---|
| Description | SIPMOS Small-Signal Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIPMOS® Small-Signal Transistor
BSS 149
q q q q q q q
VDS 200 V ID 0.35 A RDS(on) 3.5 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
1
2
3
Type
Ordering Code
.
fied. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = * 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = * 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistan. |