BSS79C Datasheet

The BSS79C is a NPN Silicon Switching Transistors.

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Part NumberBSS79C
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 . .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff .
Part NumberBSS79C
DescriptionNPN Silicon Switching Transistors
ManufacturerInfineon
Overview BSS79, BSS81 NPN Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79. min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff c.
Part NumberBSS79C
DescriptionNPN General Purpose Amplifier
ManufacturerFairchild Semiconductor
Overview BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process 19. • See BCW65C for charac. BO IEBO hFE VCE(sat) Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 60V VCB = 60V, Ta = 150°C VEB = 3.0V, IC = 0 IC = 150mA, VCE = 10V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VCC = 30V, VBE(OFF) .
Part NumberBSS79C
DescriptionSOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR
ManufacturerZetex Semiconductors
Overview SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF BSS79B BSS79C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collec. =150mA, VCE=10V IC= 150mA, VCE=10V Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo td tr ts tf BSS79B BSS79C MHz pF ns ns ns ns VCE=20V, IC=20mA f=100MHz VCB=10V, f=1MHz VCC=30V, IC=150mA IB1=IB2=15mA VCC=30V, IC=150mA IB1=IB2=15mA Rise Time Storage Time Fall Time PAGE N.

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