BT258-600R Datasheet
BT258-600R Datasheet (NXP Semiconductors)
NXP Semiconductors
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to.
ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current No.
BT258-600R Datasheet (HAOPIN)
HAOPIN
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to.
Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL VDRM VRRM PARAMETER Repetitive peak off-state voltages Voltages IT RMS ITSM RMS on-state current Non-repetitive peak on-state current 500R 600R 800R Value 500 600 800 8 75 Unit V A A SYMBOL Rth j-mb R.