BT258X-500R Datasheet
BT258X-500R Datasheet (NXP Semiconductors)
NXP Semiconductors
Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced direct.
surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state c.
BT258X-500R Datasheet (WeEn)
WeEn
Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced direct.
he Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state - voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current half sine wave; Ths ≤ 90 ˚C - RMS on-state current all conduction angles - Non-repet.