The BTA212B-800B is a Thyristor.
| Max Operating Temp | 125 °C |
|---|
| Part Number | BTA212B-800B Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliab. s otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=100℃ 0.01 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=17A,tP=380μs Ⅰ . |
| Part Number | BTA212B-800B Datasheet |
|---|---|
| Description | Three quadrant triacs |
| Manufacturer | NXP Semiconductors |
| Overview | Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices wi. titive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BTA212B-800F | NXP Semiconductors | Three quadrant triacs |
| BTA212B-800E | NXP Semiconductors | Three quadrant triacs |
| BTA212B-800E | WeEn | Three quadrant triacs |
| BTA212B-800C | NXP Semiconductors | Three quadrant triacs |