BTA330X-800BT Datasheet and Specifications PDF

Part Number	BTA330X-800BT Datasheet
Manufacturer	Inchange Semiconductor
Overview	·With TO-3PN packaging ·Can be operated in 3 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. ed) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth( j-c) Junction to case IT=42A;tP=380μs Ⅰ VD =12V;IT=0.1A;.

Part Number

BTA330X-800BT Datasheet

Description

3Q Hi-Com Triac

Manufacturer

NXP Semiconductors

Overview

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Th. and benefits
* 3Q technology for improved noise immunity
* 2500 V RMS isolation voltage capability
* High commutation capability with maximum false trigger immunity
* High immunity to false turn-on by dV/dt
* High junction operating temperature capability
* High voltage capability
* High current cap.