| Part Number | BU2520AF Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. INCHANGE Semiconductor BU2520AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collect. |
BU2520AF Datasheet and Specifications PDF
The BU2520AF is a NPN Transistor.
| Part Number | BU2520AF Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS · For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIP. US) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO Emitter-base breakdown voltage IB=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2 A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V. |
| Part Number | BU2520AF Datasheet |
|---|---|
| Description | Silicon Diffused Power Transistor |
| Manufacturer | NXP Semiconductors |
| Overview | New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 3. SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total p. |