BU406H Datasheet
BU406H Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC.
Units mA µA mA mA V V V V V V MHz µs µs µs IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408 VBE(sat) fT tOFF ©2000 Fa.
BU406H Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for u.
d trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A VBE(sat) Base-Emitter Saturation.