BU426 Datasheet
BU426 Datasheet (Bourns)
Bourns
BU426, BU426A NPN SILICON POWER TRANSISTORS ● ● Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in el.
EPTEMBER 2002 Specifications are subject to change without notice. BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current.
BU426 Datasheet (STMicroelectronics)
STMicroelectronics
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BU426 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for swi.
or ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A VBE(s.