| Part Number | BUH315D Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use. lue 1500 700 10 6 12 3 5 44 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 December 1999 BUH315D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ P. |
BUH315D Datasheet and Specifications PDF
The BUH315D is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BUH315D Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCE. IN BUH315D TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V IEBO Emitter Cutoff Current VEB= 5V; IC=0 . |