| Part Number | BUL147F Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge terminati. er Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 100. |
BUL147F Datasheet and Specifications PDF
The BUL147F is a POWER TRANSISTOR.
| Part Number | BUL147F Datasheet |
|---|---|
| Description | POWER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is desi. ating Junction Temperature Value 1600 800 9 4 6 2 4 90 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL216 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.39 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tca. |