| Part Number | BUL44D2 |
|---|---|
| Manufacturer | onsemi |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL44D2/D
BUL44D2
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode a.
* Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread * Integrated Collector *Emitter Free Wheeling Diode * Fully Characterized and Guaranteed Dynamic VCE(sat) * “6 Sig. |