| Part Number | BUV48A Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | . . |
BUV48A Datasheet and Specifications PDF
The BUV48A is a SITCHMODE II Series NPN Silicon Power Transistors.
Key Specifications
| Package | TO-247 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Width | 5.15 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BUV48A Datasheet |
|---|---|
| Description | SWITCHMODE II Series NPN Silicon Power Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV48/D SWITCHMODE II Series NPN Silicon Power Transistors The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power. ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ. |
| Part Number | BUV48A Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTORS |
| Manufacturer | Power Innovations Limited |
| Overview | BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 15 A Continuous Collecto. 450 15 30 4 20 55 125 -65 to +150 -65 to +150 UNIT V V V A A A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include. |
| Part Number | BUV48A Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are . ebsite 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=. |