BUX48C Datasheet
BUX48C Datasheet (STMicroelectronics)
STMicroelectronics
The BUX48C, BUV48C and BUV48CFI are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. They are particul.
) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1/6 January 2000 BUX48C/BUV48C/BUV48CFI THERMAL D.
BUX48C Datasheet (Comset Semiconductors)
Comset Semiconductors
NPN BUX48C HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR The BUX48C is silicon multiepitaxial mesa NPN transistor in Jedec TO-3. They are intended for use in switching and industrial equipment. Complia.
Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC= 100 mA Min 700 7 15 - Typ - Mx 30 1 0.5 3 1 50 1.5 3 1.5 2 Unit V V mA mA mA V IC= 0A, IE= 50 mA VCE= 700 V, IB= 0A VCE= 1200 V, VBE= 0V Collector Cutoff Current VCE= 1200 V, V.
BUX48C Datasheet (SavantIC)
SavantIC
·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Linear and switching industrial equipment. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION BUX.
Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain C.
BUX48C Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High Voltage Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and industrial applications fro.
registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCBO(SUS) Collector-Emitter Sustaining Voltage IE= 1mA; IB= 0 VCE(sat)-1 Collector-Em.