BUY55 Datasheet and Specifications PDF

The BUY55 is a Silicon NPN Power Transistor.

Part NumberBUY55 Datasheet
ManufacturerInchange Semiconductor
Overview · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and relia. wer Transistor BUY55 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 VCE(s.
Part NumberBUY55 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview BUY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. . . Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk W.

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