The BUZ21L is a Power Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BUZ21L Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 21 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 21 L Pin 2 D Pin 3 S VDS 100 V ID 21 A RDS(on) 0.085 Ω Package TO-220 AB Ord. ristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.6 0.1 10 10 0.075 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage d. |
| Part Number | BUZ21L Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Infineon |
| Overview | SIPMOS ® Power Transistor BUZ 21L • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS ID RDS(on) Package BUZ 21 L 100 V 21 A 0. haracteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BUZ21 | Infineon | Power Transistor |
| BUZ21SMD | Infineon | Power Transistor |
| BUZ21 | Siemens Semiconductor Group | Power Transistor |
| BUZ216 | Siemens Semiconductor Group | Power Transistor |
| BUZ21 | STMicroelectronics | N-Channel MOSFET |
| BUZ214 | Siemens Semiconductor Group | Power Transistor |
| BUZ213 | Siemens Semiconductor Group | Power Transistor |