BUZ308 Datasheet

The BUZ308 is a Power Transistor.

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Part NumberBUZ308
ManufacturerSiemens Semiconductor Group
Overview BUZ 308 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 VDS 800 V ID 2.6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-. in. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 3.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 8.
Part NumberBUZ308
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable oper.
*High speed switching
*Low RDS(ON)
*Easy driver for cost effective application
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Automotive power actuator drivers
*Motor controls
*DC-DC converters
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VA.