| Part Number | BUZ40B |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C6. r Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 0.6 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 500 V, VGS = 0 V, Tj = 25 . |
BUZ40B Datasheet
The BUZ40B is a Power Transistor.
| Part Number | BUZ40B |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
BUZ40B
·FEATURES ·SOA is Power Dissipation Limited
• Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variation.
*SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Designed for applications such as switching regulators, switching converters, moto. |