BUZ41A Datasheet

The BUZ41A is a N-Channel Power MOSFET.

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Part NumberBUZ41A
ManufacturerIntersil
Overview BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate po.
* 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power
* rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as
* SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub
* Nanosecond Switching Speeds relay .
Part NumberBUZ41A
DescriptionPower Transistor
ManufacturerSiemens Semiconductor Group
Overview BUZ 41 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 41 A VDS 500 V ID 4.5 A RDS(on) 1.5 Ω Package TO-220 AB Ordering Code C6. r Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 1.3 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 500 V, VGS = 0 V, Tj = 25 .
Part NumberBUZ41A
DescriptionN-Channel MOSFET
ManufacturerSTMicroelectronics
Overview BUZ41A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ41A Voss 500 V ROS(on) 1.5 D 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRI. A 18 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 199 BUZ41A THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient max 1.67 °CIW max 75 °CIW ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Condition.
Part NumberBUZ41A
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor BUZ41A ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variation.
*SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
*High speed switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Designed for applications such as switching regulators, switching converters, moto.