BUZ72L Datasheet and Specifications PDF

The BUZ72L is a Power Transistor.

Key Specifications

Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBUZ72L Datasheet
ManufacturerInfineon
Overview SIPMOS ® Power Transistor BUZ 72L • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 100 V ID 10 A RDS(on) 0.2 Ω Package BUZ 72 . istics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage dr.
Part NumberBUZ72L Datasheet
DescriptionPower Transistor
ManufacturerSiemens Semiconductor Group
Overview BUZ 72 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 72 L Pin 2 D Pin 3 S VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220 AB Order. cs, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.6 0.1 10 10 0.12 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain c.
Part NumberBUZ72L Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan.
*Low RDS(on)
*SOA is Power Dissipation Limited
*Nanosecond Switching Speeds
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High current , high speed switching
*Solenoid and relay drivers
*DC-DC & DC-AC converters
*ABSOLUTE MA.

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