| Part Number | BZT52C6V8S |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Overview |
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
200mW, 5% Tolerance SMD Zener Diode
FEATURES
● Wide Zener voltage range selection: 2.4V to 75V ● VZ tolerance selection of ± 5% ● Moisture sensitivity lev.
* Wide Zener voltage range selection: 2.4V to 75V * VZ tolerance selection of ± 5% * Moisture sensitivity level: level 1, per J-STD-020 * RoHS Compliant APPLICATIONS * Low voltage stabilizers or voltage references * Adapters * On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT VZ 2.4 -. |
BZT52C6V8S Datasheet
The BZT52C6V8S is a SMD Zener Diode.
| Part Number | BZT52C6V8S |
|---|---|
| Description | SURFACE MOUNT ZENER DIODE |
| Manufacturer | Diodes Incorporated |
| Overview |
Features
Planar Die Construction Small Surface Mount Package Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free..
* Planar Die Construction * Small Surface Mount Package * Ideally Suited for Automated Assembly Processes * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Notes 3 & 4) * Qualified to AEC-Q101 Standards for High Reliability BZT52C2V0S - BZT52C39S . |
| Part Number | BZT52C6V8S |
|---|---|
| Description | ZENER DIODE |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52CS ZENER DIODE FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z Ge. z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version SOD-323 Marking: XX= Device code, see table on page2 the marking code The marking bar indicates the cathode Solid. |
| Part Number | BZT52C6V8S |
|---|---|
| Description | SURFACE MOUNT SILICON ZENER DIODES |
| Manufacturer | Continental Device India |
| Overview | Maximum Forward Voltage Drop @ IF= 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load Operating Junction and Storage Temperature Range * M. .80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 VF @ 10mA <0.9V Reverse Leakage Zener Impedance Current ZZK @ IZK ZZT @ IZT IR @ VR (mA) (mA) (V) (Ω ) (Ω ) (µ A) max max max 95 5.0 500 1.0 5.0 1.0 78 5.0 500 1.0 5.0 2.0 60 5.0 480 1.0 0.1 0.8 40 5.0 400 1.0 0.1 1.0 10 5.0 200 1.0 0.1 2.0 8. |