| Part Number | Bc214 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BC214 BC214 PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. 1 TO-92 1. . BO IEBO hFE Parameter Test Condition IC = -2mA, IB = 0 IC = -10µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VEB = -4V, IC = 0 VCE = -5V, IC = -10µA VCE = -5V, IC = -2mA VCE = -5V, IC = -100mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCE = -5V, IC. |
Bc214 Datasheet
The Bc214 is a Process 63 PNP Medium Power Transistor.
| Part Number | BC214 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Micro Electronics |
| Overview | . . |
| Part Number | BC214 |
|---|---|
| Description | Amplifier PNP Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC212/D
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
BC212,B BC213 BC214
MAXIMUM RATINGS
Rating Collector – Emitter .
IC = *10 mA, IE = 0) Emitter * Base Breakdown Voltage (IE = *10 mAdc, IC = 0) Collector *Emitter Leakage Current (VCB = *30 V) Emitter *Base Leakage Current (VEB = *4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min *50 *30 *30 . |
| Part Number | BC214 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Continental Device India |
| Overview | SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ . , BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=2mA,IB=0 BC212 50 BC213, BC214 30 Collector Base Voltage VCBO IC=10µA.IE=0 BC212 . |