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C106B Datasheet

The C106B is a Sensitive Gate Silicon Controlled Rectifiers. Download the datasheet PDF and view key features and specifications below.

Part NumberC106B
Manufactureronsemi
Overview C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, lig. Sine Wave, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 µsec, TC = 80°C) Operating Junction Temperature Range Storage.
Part NumberC106B
DescriptionSCR
ManufacturerMotorola Semiconductor
Overview SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for h. (TA = 30°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ =
  –40 to +110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Forward Gate Current Symbol VDRM or VRRM Value 50 100 200 400 600 4 2.55 20 1.65 0.5 0.1 0.2 Amps Amps Amps A2s Watt Watt Amp Unit Volts IT(RMS) .
Part NumberC106B
Description4-A Sensitive-Gate Silicon Controlled Rectifiers
ManufacturerGE Solid State
Overview . .
Part NumberC106B
DescriptionThyristors
ManufacturerLittelfuse
Overview Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is.
* Glassivated Surface for Reliability and Uniformity
* Power Rated at Economical Prices
* Practical Level Triggering and Holding Characteristics
* Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
* Sensitive Gate Triggering
* These are Pb−Free D.

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