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C106M Datasheet

The C106M is a Sensitive Gate Silicon Controlled Rectifiers. Download the datasheet PDF and view key features and specifications below.

Part NumberC106M
Manufactureronsemi
Overview C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, lig. Sine Wave, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 µsec, TC = 80°C) Operating Junction Temperature Range Storage.
Part NumberC106M
DescriptionSCR
ManufacturerHAOPIN
Overview Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor . Blocking voltage to 600 V On-state RMS current to 4 A SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current full sine wave ITSM Non-repetitive peak on-state current C106D C106M Value 400 600 4 20 Unit V A A SYMBOL R JC R JA PARAMETER Thermal resistance Junc.
Part NumberC106M
DescriptionThyristors
ManufacturerLittelfuse
Overview Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is.
* Glassivated Surface for Reliability and Uniformity
* Power Rated at Economical Prices
* Practical Level Triggering and Holding Characteristics
* Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
* Sensitive Gate Triggering
* These are Pb−Free D.
Part NumberC106M
DescriptionSilicon Controlled Rectifier
ManufacturerMotorola Semiconductor
Overview SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for h. (TA = 30°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ =
  –40 to +110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Forward Gate Current Symbol VDRM or VRRM Value 50 100 200 400 600 4 2.55 20 1.65 0.5 0.1 0.2 Amps Amps Amps A2s Watt Watt Amp Unit Volts IT(RMS) .

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