| Part Number | C106M1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, lig. Sine Wave, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 µsec, TC = 80°C) Operating Junction Temperature Range Storage. |
C106M1 Datasheet PDF
The C106M1 is a Sensitive Gate Silicon Controlled Rectifiers.
| Part Number | C106M1 Datasheet |
|---|---|
| Description | SILICON CONTROLLED RECTIFIER |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems whe. W W A V °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C VTM IFM=4.0A IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C V. |