C2173 Datasheet and Specifications PDF

: SILICON NPN EPITAXIAL PLANAR TYPE V A UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Pha.

. Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-B.

C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current (CV and CC) regulation • Bipolar ju.

AND ADVANTAGES
* Advanced primary sensing control circuitry achieves accurate voltage and current (CV and CC) regulation
* Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design solutions
* Fast start-up performance without additional active components for low BOM cost
* .